Skip to content 
National third-generation semiconductorsTechnology Innovation Center (Nanjing)It took 4 years of independent research and development. Successfully tackled trench silicon carbideKey technologies for MOSFET chip manufacturing. Break the planar type silicon carbide. MOSFET chip performance “ceiling”.
This is China’s first breakthrough in this field.
National Third Generation Semiconductor Technology Innovation Center (Nanjing). Source: Jiangning release.
Silicon carbide is a third-generation semiconductor material
representative materials
It has a wide bandgap and a high critical breakdown electric field
High electron saturation migration rate and
Excellent characteristics such as high thermal conductivityAt present, the application in the industry is mainly planar silicon carbide MOSFET chips. The design of the trench gate structure has obvious performance advantages over the planar gate structure, which can achieve lower conduction loss, better switching performance, and higher wafer density, thereby greatly reducing the cost of chip use.
“It’s all about the process.”
Huang Runhua, technical director of the National Third-Generation Semiconductor Technology Innovation Center (Nanjing), introduced that the hardness of silicon carbide materials is very high, and changing the plane to a trench means that it is necessary to “dig holes” in the material, and it cannot be “dug into potholes”.
In the preparation process, the etching accuracy, etching damage and etching surface residues of the etching process have a fatal impact on the development and performance of silicon carbide devices.
On the platform of the National Third-Generation Semiconductor Technology Innovation Center (Nanjing), researchers test products on the third-generation semiconductor-silicon carbide chip production line. Source: Nanjing Daily/Purple Mountain News reporter Sun Zhongyuan.
In this regard, the third generation of semiconductors in the country
Technology Innovation Center (Nanjing)
Organize the core R&D team and the whole line cooperation team
It took 4 years to try new processes
The result is a completely new process flow
Break through the difficulties of “digging pits”, such as difficulty, stability and accuracy
Successfully manufactured trench silicon carbide MOSFET chips
Compared with the planar type, the conduction performance is improved by about 30%.
At present, the center is developing trench silicon carbide MOSFET chip products and launching trench silicon carbide power devices.
It is expected to be put into application in the fields of electric drive of new energy vehicles, smart grid, and photovoltaic energy storage within one year.
What is the impact on people’s lives?Huang Runhua took new energy vehicles as an example to introduce that silicon carbide power devices themselves have power-saving advantages compared with silicon devices, which can improve the endurance by about 5%; The application of a trench structure enables a design with lower resistance. With the same on-performance indicators, a higher density chip layout can be realized, thereby reducing the cost of chip ownership.
Yole, a market research agency, maintains a long-term optimism about the silicon carbide power device market, and the company expects the market size of silicon carbide power devices to reach $10 billion by 2029, with a compound annual growth rate of 25% from 2023 to 2029.
Production generation, R&D generation, pre-research generation
At present, the country’s third-generation semiconductors
Technology Innovation Center (Nanjing)
The research on silicon carbide super-assembled devices has been initiated
“The performance of this structure
It is better and stronger than that of the grooved structure
It’s still under development.”
Huang Runhua revealed
